Thermodynamics of isovalent tellurium substitution for selenium in ZnSe semiconductor

摘要

The microscopic mechanisms of isovalent ZnSe doping by tellurium have been studied. It has been shown that either Te-zinc vacancy binary complexes (when there is a Se excess and the dopation occurs along the ZnSe-Te section) or Te-Zn vacancy-interstitial Zn ternary complexes (when the dopation occurs along the ZnSe-ZnTe section) predominate at low Te concentrations. When ZnSe and ZnTe concentrations are commensurable, the dissolution mechanism transits to classic substitution without complex formation.