Effect of metal layer processes on the structures and properties of ITO interlayers of the Si/CIGS tandem cells

摘要

For the application of Si/CIGS tandem cells, ITO interlayers were successfully deposited in the tandem cells by magnetron RF-sputtering. In the deposition, different interlayer processes (No, Al, Fe and Mo metal layer) were chosen, resulting in different structures, morphologies and electrical properties. The SEM morphology results indicated that the Mo metal layer process was favourable to resulting in the enhancement of the crystallinity and agglomerate density of ITO interlayer grains. Moreover, the AFM measurements suggested that the metal layer processes had a great influence on the nucleation and growth of the interlayer crystal grains. Also, the electrical measurements suggested that the ITO/Mo interlayer had better electrical property compared with the other interlayers.