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Smoke Damage Potentials in Industrial Fire Applications

机译:工业火灾应用中的烟雾破坏潜力

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摘要

A methodology is presented for the evaluation of smoke damage contours through the coupling of smoke damage functions, deposition profiles and damage thresholds. Previously developed smoke damage functions and deposition velocities are used to illustrate "far-field" smoke damage potentials both for materials representative of semiconductor fabrication facilities as well as large warehouse storage applications. For semiconductor fabrication, smoke damage associated with leakage current (LC) is important, while smoke staining is of primary interest in warehouse storage. Smoke deposition velocities, a key component to quantifying smoke deposition profiles, were determined in a small (1.0 m~3) and large (1,200 m~3) enclosure. Both enclosures resulted in comparable values. The velocities ranged from 1.2 to 7.3 × 10~(-4) m/s. To determine smoke damage potential contours for semiconductor fabrication facilities, electronic circuit board targets were used. Smoke damage was quantified by LC (i.e., shorting). The average normalized LC values for polyvinyl-chloride, polycarbonate, and nylon ranged from 0.72 to 6.1 × 10~(-4) A m~2/g. For warehouse storage facilities, filter targets were used. Smoke damage was quantified by brightness change and odor (i.e., volatile organic compounds, VOC) measurements on the targets. Representative materials were liner board, polystyrene, and poly-methyl methacrylate. The smoke damage threshold value for brightness change was 0.012 g/m~2 and for odor was 0.025 g VOC/m~2. Resulting contours showed strong radial dependency with distance from the fire/smoke source. Smoke damage reached ~28 m for semiconductor fabrication facilities, while for warehouse storage facilities, it was up to 100 m.
机译:提出了一种通过烟雾损害功能,沉积曲线和损害阈值的耦合来评估烟雾损害轮廓的方法。以前开发的烟雾破坏功能和沉积速度用于说明代表半导体制造设施的材料以及大型仓库存储应用的“远场”烟雾破坏潜力。对于半导体制造而言,与泄漏电流(LC)相关的烟雾损害非常重要,而烟雾污渍是仓库存储的主要关注点。在小(1.0 m〜3)和大(1200 m〜3)的外壳中确定了烟雾沉积速度,这是量化烟雾沉积轮廓的关键组成部分。两种外壳的结果均相当。速度范围从1.2到7.3×10〜(-4)m / s。为了确定半导体制造设施的潜在烟雾危害轮廓,使用了电子电路板目标。烟气损害通过LC量化(即短路)。聚氯乙烯,聚碳酸酯和尼龙的平均归一化LC值为0.72至6.1×10〜(-4)A m〜2 / g。对于仓库存储设施,使用了过滤目标。通过在目标上测量亮度变化和气味(即挥发性有机化合物,VOC)来量化烟雾损害。代表性的材料是衬板,聚苯乙烯和聚甲基丙烯酸甲酯。亮度变化的烟雾破坏阈值为0.012 g / m〜2,气味的阈值为0.025 g VOC / m〜2。所得轮廓显示出与火/烟源之间的距离具有很强的径向依赖性。半导体制造设施的烟雾损害达到〜28 m,而仓库存储设施的烟雾损害高达100 m。

著录项

  • 来源
    《Fire Technology》 |2014年第6期|1437-1458|共22页
  • 作者单位

    FM Global, 1151 Boston-Providence Turnpike, Norwood, MA 02062, USA;

    FM Global, 1151 Boston-Providence Turnpike, Norwood, MA 02062, USA;

    FM Global, 1151 Boston-Providence Turnpike, Norwood, MA 02062, USA;

    FM Global, 1151 Boston-Providence Turnpike, Norwood, MA 02062, USA;

    FM Global, 1151 Boston-Providence Turnpike, Norwood, MA 02062, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Smoke damage; Smoke deposition; Corrosion; Industrial fires;

    机译:烟雾损害;烟雾沉积;腐蚀;工业大火;
  • 入库时间 2022-08-18 00:12:22

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