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A controlled-NOT gate in a chain of qubits embedded in a spin field-effect transistor and its process tomography

机译:嵌入自旋场效应晶体管中的量子比特链中的受控NOT门及其过程层析成像

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摘要

We have investigated the realizability of the controlled-not (cnot) gate and characterized the gate operation by quantum process tomography for a chain of qubits, realized by electrons confined in self-assembled quantum dots embedded in the spin field-effect transistor. We have shown that the cnot gate operation and its process tomography are performable by using the spin exchange interaction and several local qubit rotations within the coherence time of qubits. Moreover we have taken into account the fluctuation of operation time and the imperfection of polarization of channel electrons as sources of decay of fidelity. The cnot process fidelity decreases only by at most 5% by the fluctuation of the operation time and its values as high as 0.49 and 0.72 are obtained for the channel spin polarizations of 0.6 and 0.8, respectively.
机译:我们研究了可控非(结)门的可实现性,并通过量子过程层析成像技术对一串量子位进行了栅极操作,该量子位是由电子限制在自旋场效应晶体管中嵌入的自组装量子点中实现的。我们已经显示,通过使用自旋交换相互作用和量子位的相干时间内的几个局部量子位旋转,可以进行结闸操作及其过程层析成像。此外,我们已经考虑到操作时间的波动和作为保真度衰减源的通道电子的极化缺陷。由于操作时间的波动,打结过程的保真度最多只能降低5%,并且对于0.6和0.8的通道自旋极化,其结点保真度分别高达0.49和0.72。

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