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首页> 外文期刊>ETRI journal >A 160 x 120 Light-Adaptive CMOS Vision Chip for Edge Detection Based on a Retinal Structure Using a Saturating Resistive Network
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A 160 x 120 Light-Adaptive CMOS Vision Chip for Edge Detection Based on a Retinal Structure Using a Saturating Resistive Network

机译:基于采用饱和电阻网络的视网膜结构的边缘检测的160 x 120光自适应CMOS视觉芯片

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摘要

We designed and fabricated a vision chip for edge detection with a 160 x 120 pixel array by using 0.35μM standard complementary metal-oxide-semiconductor (CMOS) technology. The designed vision chip is based on a retinal structure with a resistive network to improve the speed of operation. To improve the quality of final edge images, we applied a saturating resistive circuit to the resistive network. The tight-adaptation mechanism of the edge detection circuit was quantitatively analyzed using a simple model of the saturating resistive element. To verify improvement, we compared the simulation results of the proposed circuit to the results of previous circuits.
机译:我们使用0.35μM标准互补金属氧化物半导体(CMOS)技术设计并制造了一种用于边缘检测的视觉芯片,具有160 x 120像素阵列。设计的视觉芯片基于具有电阻网络的视网膜结构,以提高手术速度。为了提高最终边缘图像的质量,我们将饱和电阻电路应用于电阻网络。使用简单的饱和电阻元件模型对边缘检测电路的紧密适配机制进行了定量分析。为了验证改进,我们将拟议电路的仿真结果与先前电路的结果进行了比较。

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