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A low-cost and high performance ball-milled Si-based negative electrode for high-energy Li-ion batteries

机译:用于高能锂离子电池的低成本,高性能球磨硅基负极

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摘要

A Si-based anode with improved performance can be achieved using high-energy ball-milling as a cheap and easy process to produce Si powders prepared from a coarse-grained material. Ball-milled powders present all the advantages of nanometric Si powders, but not the drawbacks. Milled powders are nanostructured with micrometric agglomerates (median size ~10 μm), made of submicrometric cold-welded particles with a crystallite size of ~10 nm. The micrometric particle size provides handling and non-toxicity advantages compared to nanometric powders, as well as four times higher tap density. The nanostructuration is assumed to provide a shortened Li~+ diffusion path, a fast Li~+ diffusion path along grain boundaries and a smoother phase transition upon cycling. Compared to non-milled 1-5 μm powders, the improved performance of nanostructured milled Si powders is linked to a strong lowering of particle disconnection at each charge, while the irreversibility due to SEI formation remains unchanged. An electrode prepared in acidic conditions with the CMC binder achieves 600 cycles at more than 1170 mA h per gram of the milled Si-based electrode, in an electrolyte containing FEC/VC SEI-forming additives, with a coulombic efficiency above 99%, compared to less than 100 cycles at the same capacity for an electrode containing nanometric Si powder.
机译:使用高能球磨可以廉价,简便地生产由粗晶粒材料制备的硅粉,从而可以提高硅基阳极的性能。球磨粉具有纳米Si粉的所有优点,但没有缺点。研磨后的粉末是由微米级团聚体(中值尺寸约为10μm)组成的纳米结构,该团聚体由晶粒度约为10 nm的亚微米级冷焊颗粒制成。与纳米粉末相比,微米级粒度提供了处理和无毒的优点,并且振实密度高了四倍。假定纳米结构提供了缩短的Li +扩散路径,沿着晶界的快速Li +扩散路径以及循环时较平滑的相变。与未研磨的1-5μm粉末相比,纳米结构化研磨的Si粉末的性能改善与每次加料时颗粒断开的强烈降低有关,而SEI形成引起的不可逆性保持不变。在含有FEC / VC SEI形成添加剂的电解质中,使用CMC粘合剂在酸性条件下制备的电极在每克碾磨的Si基电极超过1170 mA h的条件下可实现600个循环,而库仑效率高于99%对于包含纳米Si粉末的电极,在相同容量下的最大循环次数少于100次。

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  • 来源
    《Energy & environmental science》 |2013年第7期|2145-2155|共11页
  • 作者单位

    Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes Cedex 03, France,INRS-Energie, Materiaux et Telecommunications, 1650 boulevard Lionel Boulet,Varennes, Quebec, J3X 1S2, Canada;

    Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes Cedex 03, France;

    INRS-Energie, Materiaux et Telecommunications, 1650 boulevard Lionel Boulet,Varennes, Quebec, J3X 1S2, Canada;

    Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes Cedex 03, France;

    Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes Cedex 03, France;

    Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes Cedex 03, France;

    INRS-Energie, Materiaux et Telecommunications, 1650 boulevard Lionel Boulet,Varennes, Quebec, J3X 1S2, Canada;

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