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首页> 外文期刊>Emerging and Selected Topics in Power Electronics, IEEE Journal of >Design and Control of a GaN-Based, 13-Level, Flying Capacitor Multilevel Inverter
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Design and Control of a GaN-Based, 13-Level, Flying Capacitor Multilevel Inverter

机译:设计和控制GaN的13级飞行电容器多级逆变器

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Multilevel topologies are an appealing method to achieve higher power density converters for both mobile and stationary systems. This article discusses the design and high-performance hardware implementation of a 13-level, flying capacitor multilevel (FCML) inverter. Derivation of flying capacitor sizing for ac output voltages (for an arbitrary level FCML) is provided. Operating from an 800-Vdc bus, this hardware prototype utilizes switch modules with 100-V rating. Moreover, a 120-kHz switching frequency is enabled through the use of gallium nitride (GaN) FETs and the development of custom-integrated switching cells, which reduce commutation loop inductance and allow for a modular design. The frequency multiplication effect of FCML inverters allows the output inductor of the inverter to be made exceptionally small (4.7 mu H) while maintaining a 0.7% total harmonic distortion (THD) due to the 1.44-MHz effective inductor ripple frequency.
机译:多级拓扑是一种吸引人的方法,用于实现移动和静止系统的更高功率密度转换器。本文讨论了13级的设计和高性能硬件实现,飞行电容多级(FCML)变频器。提供了用于AC输出电压(用于任意电平FCML)的飞行电容器尺寸的推导。此硬件原型从800 VDC总线运行,使用具有100 V额定值的开关模块。此外,通过使用氮化镓(GaN)FET和定制的开关单元的开发来实现120 kHz开关频率,这减少了换向环电感并允许模块化设计。 FCML逆变器的频率倍增效果允许逆变器的输出电感器以异常小(4.7μH),同时由于1.44-MHz的有效电感纹波频率保持0.7%的总谐波失真(THD)。

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