Drive System With Asymmetrical Power Electronics Devices for Novel Reluctance Machines With DC-Biased Sinusoidal Current

摘要

This paper proposes a drive system with asymmetrical power electronics devices for the novel reluctance machines with dc- biased sinusoidal current, which is called as dc- RMs in this paper. The three-phase sinusoidal current with same dc offset is injected into the stator winding in the dc- VMs. Therefore, the power device selection method of the conventional motor drive is no longer suitable for dc- RMs. Because of the dc- biased sinusoidal current, two-quadrant switches with asymmetrical current capacity are proposed for the dc- RMs drive. With the asymmetrical switches, the asymmetrical three-phase H-bridge inverter is further brought out. This paper, detailed, analyzes the influence of modulation strategy on current stress of each device and derive the specific current capacity of asymmetric switches. The effects of harmonic current on the current stress, caused by the harmonic back electromotive force in dc- RMs, are also analyzed. Simulation and experimental verification show that the drive with asymmetrical power electronics devices can ensure the performance of the motor while reducing the cost, increasing the power density, and balancing the temperature of the power devices. The theoretical calculation of the current stress is also proved to be precise. In addition, the two-quadrant switches with asymmetric capacity proposed in this paper can also be applied to other dc- RMs drive structure to improve performance.