Pomiary in-situ jednorodności temperatury i ex-situ grubości osadzonej warstwy w systemie epitaksjalnym AIXTRON CCS 3 × 2'

摘要

The The paper presents the method of temperature calibration of the epitaxy process in the AIXTRON CCS 3x2 '' system. The pyrometric system calibrated allows to monitor in-situ the temperature of the substrate on a 5 '' graphite base, within the temperature range from 400 degrees C to 1300 degrees C with an accuracy of 2 degrees C. Also the stand and the measurement method with the use of interference to determine the thickness of the created layer are presented. As a light source, a black body heated to 1060 degrees C and heterostructure AlGaN/GaN/Al2O3 were used. Layer thickness measurements were taken ex-situ, but can be successfully done in-situ.