机译:带有AlGaAs / GaAs异质结双极晶体管(HBT)的高速线性阵列电路
AT&T Bell Labs., Murray Hill, NJ, USA;
III-V semiconductors; aluminium compounds; bipolar integrated circuits; cellular arrays; digital integrated circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; 3.5 micron; 40 GHz; 7.5 GHz; AlGaAs-GaAs; HBTs; customised version; cutoff frequency; digital divide-by-two; emitter width; high-speed linear array circuit; linear array circuit; linear array configuration; optimised layout version;
机译:完全自对准的AlGaAs / GaAs异质结双极晶体管,适用于高速集成电路应用
机译:AlGaAs / GaAs自对准薄发射极异质结双极晶体管(SATE-HBT)的亚微米缩放,电流增益与发射极面积无关
机译:AlGaAs / GaAs异质结双极晶体管:器件技术和电路应用
机译:自对准AlGaAs / GaAs异质结双极晶体管,用于高速数字电路
机译:基于N沟道InGaAsP-InP的倒置通道技术器件(ICT)的设计,制造和表征,用于光电集成电路(OEIC):双异质结光电开关(DOES),异质结场效应晶体管(HFET),双极倒置沟道场-效应晶体管(BICFET)和双极型反向沟道光电晶体管(BICPT)。
机译:AlGaAs / GaAs异质结优化GaAs纳米线pin结阵列太阳能电池
机译:Si同质结,AlgaAs / GaAs异质结和Si / SiGe异质结双极晶体管的拟鸣区域
机译:alGaas / InGaasN / Gaas pnp双异质结双极晶体管