Interelectrode capacitance nonlinearities in vertical power DMOSFETs

摘要

Extensive numerical simulations were performed to understand interelectrode capacitance characteristics of vertical power DMOSFETs. Two-dimensional simulations indicate large capacitance-voltage nonlinearities, especially for the gate-to-drain Miller capacitance C/sub gd/. Capacitance-voltage characteristics are explained in terms of a simple equivalent circuit that relates each capacitance component to its physical origin.