Lumped element 12 GHz LNA MMIC using InGaAs/GaAs MODFETs with optimised gate width and reactive feedback

摘要

A two-stage 12 GHz LNA has been realised as a lumped element MMIC on GaAs substrates using In/sub 0.25/Ga/sub 0.75/As channel PM-MODFETs. The gain is <17 dB and noise figure is >1.25 dB. Input (output) match is better than -21 DB (-14 qB). The MMIC design includes reactive feedback by source inductances and makes use of optimised gate widths for broad noise circles and easy impedance match.