Amorphous silicon/amorphous silicon carbide heterojunctions applied to memory device structures

摘要

It has been proposed and experimentally confirmed that band-engineered hydrogenated amorphous silicon (a-Si:H)/hydrogenated amorphous silicon carbide (a-SiC:H) heterojunctions on c-Si can be applied to electrically programmable and erasable memory devices. A test diode with the structure c-Si/graded a-SiC:H/a-Si:H/uniform a-SiC:H/Al exhibits a large hysteresis in the C-V characteristic with a retention time of 0.8 s at room temperature.