Improvement of electroluminescence characteristics of porous silicon LED by using amorphous silicon layers

摘要

Amorphous silicon (a-Si:H) layers are used to improve the injection current density J and threshold voltage V/sub th/ of porous silicon light emitting diodes (PS-LEDs). A PS-LED with n-i-n-p-n a-Si:H layers is shown to have a substantially (<6 orders of magnitude) higher J than that of the PS-LED without any a-Si:H layers. In addition, a lower V/sub th/ of 4.2 V and a higher brightness B of: 20.5 cd/m/sup 2/ at J=600 mA/cm/sup 2/ are achieved as compared to other PS-LEDs with n-i-p-n a-Si:H layers.