Low operating current and high temperature operation of 650 nm AlGaInP visible laser diodes with real refractive index guided self-aligned structure

摘要

High temperature operation at up to 90/spl deg/C has been achieved in 65O nm-band AlGaInP visible laser diodes with a real refractive index guided self-aligned structure using an AlInP current blocking layer. The operating current is as low as 45 mA under CW operation at 60/spl deg/C and the characteristic temperature is 120 K from 20 to 60/spl deg/C.