InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth

摘要

The authors have fabricated an InP-InGaAs uni-travelling-carrier photodiode that exhibits a 3 dB bandwidth of 310 GHz and a pulse width (FWHM) of 0.97ps. Both of which are record values for photodetectors operating at a wavelength of 1.55 /spl mu/m. The average electron velocity in the depletion region is estimated to be 3.0/spl times/10/sup 7/ cm/s.