Very low threshold current density operation of 1.5 /spl mu/m DFB lasers with wire-like active regions

摘要

Very low threshold 1.5 /spl mu/m-wavelength GaInAsP/InP distributed feedback lasers consisting of deeply etched double quantum-well wire-like active regions have been successfully realised by CH/sub 4//H/sub 2/ reactive ion etching and metal organic vapour phase epitaxial regrowth. A threshold current density J/sub th/ of as low as 94 A/cm/sup 2/ was achieved for an active region width of 115 nm and cavity length of 600 /spl mu/m.