首页> 外文期刊>Electronicsletters >Low-jitter multi-phase digital DLL with closest edge selection scheme for DDR memory interface
【24h】

Low-jitter multi-phase digital DLL with closest edge selection scheme for DDR memory interface

机译:具有最近边缘选择方案的DDR存储器接口的低抖动多相数字DLL

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

A multi-phase digital delay-locked loop (DLL) capable of a low-jitter feature for DDR memory interface is reported. The DLL repeatedly selects the output clock edge which is closest to the reference clock edge to reduce the total jitter. A test chip was fabricated in a 0.18 μm CMOS process to verify its functionality. The measured RMS and peak-to-peak jitter of the DLL are 6.2 and 20.4 ps, respectively. The power consumption of the DLL is 12mWfroma 1.8 V supply voltage.
机译:报告了一种具有低抖动功能的DDR存储器接口的多相数字延迟锁定环(DLL)。 DLL反复选择最接近参考时钟沿的输出时钟沿,以减少总抖动。测试芯片以0.18μmCMOS工艺制造,以验证其功能。 DLL的实测RMS和峰峰值抖动分别为6.2和20.4 ps。 DLL的功耗从1.8 V电源电压开始为12mW。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号