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首页> 外文期刊>Electronics Letters >2-tap pre-emphasis SST transmitter with skin effect loss equalisation in 65 nm CMOS technology
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2-tap pre-emphasis SST transmitter with skin effect loss equalisation in 65 nm CMOS technology

机译:具有65nm CMOS技术的趋肤效应损耗均衡的2抽头预加重SST发射器

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摘要

A 2-tap pre-emphasis SST transmitter with skin effect loss equalisation is presented. The transmitter features the ability of compensating the low frequency loss caused by the channel skin effect. The transmitter equalisation coefficient setting and driver impedance adjustment are mutually decoupled. Fabricated in 65 nm CMOS technology, the transmitter can operate up to 20 Gbit/s while consuming 39 mW of power under a 1 V power supply. The skin effect loss equalisation is verified with a 24-inch FR4 channel under an 8 and 9 Gbit/s data rate.
机译:提出了具有集肤效应损耗均衡的2抽头预加重SST发射机。发射机具有补偿由通道趋肤效应引起的低频损耗的能力。发送器均衡系数设置和驱动器阻抗调整相互解耦。该发射器采用65 nm CMOS技术制造,在1 V电源下消耗高达39 mW的功率时,最高可运行20 Gbit / s。集肤效应损耗均衡是通过24英寸FR4通道以8和9 Gbit / s的数据速率进行验证的。

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