Material evolution and gradual degradation in semiconductor lasers and light emitting diodes

摘要

The injection of a nonequilibrium electron-hole plasma increases the probability of structural changes in the semiconductor material and reduces the effective activation energy for defect formation and migration. The kinetic theory of short-lived large energy fluctuations of atoms is applied to link lasers and LED gradual degradation to material parameters. A comparison between GaAs and InP based devices is made based on diffusion experimental data.