Ka-band single-pole double-throw MMIC switch using low-loss GaAs PIN diode

摘要

To realize low-insertion-loss and high-power-han- dling GaAs PIN diode monolithic microwave integrated circuit(MMIC)switches in the millimeter-wave region, a new switching device having characteristics of higher switching cutoff frequency and higher breakdown voltage is required in the place of conventional switching devices such as metal semiconductor field effect transistor(MES- FET)and pseudomorphic HEMT.