Industry's first 100-V gate driver for eGaN FETs

摘要

The LM5113 is presented as the industry's first 100-V half-bridge gate driver optimized for use with enhancement-mode GaN power field-effect transistors (FETs) in high-voltage power converters. The device is a highly integrated high-side and low-side GaN FET driver that reduces component count by 75% and shrinks printed circuit board area by up to 85% compared to discrete driver designs.