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Soitec, Sumitomo team up to develop engineered GaN substrates

机译:住友商事株式会社Soitec合作开发工程GaN衬底

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摘要

Soitec, a leading supplier of engineered substrates, and Sumitomo Electric Industries , a provider of compound semiconductor materials, have teamed up to develop engineered gallium nitride (GaN) substrates. This collaboration promises lower-cost GaN substrates that would be used in applications including high-brightness LEDs, as well as electric power devices designed for hybrid and full electric vehicles.rnThe partnership will draw on Sumitomo Electric's unique GaN wafer manufacturing technology and Soitec's Smart Cut layer transfer technology by which ultrathin GaN layers are transferred from a single GaN wafer to produce multiple, engineered GaN substrates. The engineered substrates retain the original, high crystalline quality of Sumitomo Electric's GaN wafer at a lower cost.
机译:领先的工程衬底供应商Soitec和化合物半导体材料的供应商住友电气工业株式会社(Sumitomo Electric Industries)合作开发了氮化镓(GaN)工程衬底。这项合作有望提供成本更低的GaN衬底,这些衬底将用于包括高亮度LED以及混合动力和全电动汽车设计的电力设备在内的应用.rn该合作伙伴关系将借鉴住友电气独特的GaN晶圆制造技术和Soitec的Smart Cut层转移技术,通过该技术可以从单个GaN晶片转移超薄GaN层,以生产多个工程GaN衬底。工程衬底以较低的成本保留住友电工GaN晶片的原始,高结晶质量。

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