San Jose, Calif. — Ramtron International Corp. is hoping that the two-pronged offensive it is launching in ferroelectric random-access memory technology will help its FRAM gain traction in more mainstream applications. After years of development—and promises—Ramtron (Colorado Springs, Colo.) will roll out what the company claims is the world's first 4-Mbit FRAM. At the same time, the company has expanded its ties with Texas Instruments Inc. As part of that agreement, TI (Dallas) will manufacture Ramtron's 4-Mbit FRAM line on a foundry basis using its 130-nanometer process.
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机译：Ramtron International Corp.希望它在铁电随机存取存储器技术方面发起的两管齐下的攻势将有助于其FRAM在更主流的应用中获得吸引力。经过多年的发展和承诺，Ramtron（科罗拉多州科罗拉多斯普林斯）将推出该公司所谓的世界上第一个4Mbit FRAM。同时，该公司扩大了与德州仪器（TI）的关系。作为该协议的一部分，TI（达拉斯）将使用其130纳米工艺在代工厂基础上制造Ramtron的4 Mbit FRAM生产线。
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