New structure aims to oust flash, DRAM

摘要

RESEARCHERS AT North Carolina State University reported development of a memory structure that yields devices combining the speed of DRAM with the nonvolatility and density of flash. The technology joins a lengthening list of contenders for the coveted "universal memory" title. The experimental memory, which uses a double-floating-gate FET, would enable computers to power down memories not currently being accessed, slashing energy consumption by computing platforms of all types, the researchers said.