INFLUENCE OF SURFACE LAYER DAMAGING ON PHOTOELECTROMAGNETIC EFFECT

摘要

Phoelectromagnetic (PEM) and photovoltaic (PV) responses have been measured on point illuminated silicon wafers. The spatial distributions of the photoresponses due to scanning the laser beam upon the sample surface have shown (he configuration of mechanical damages of surface films. The obtained results are interpreted taking into account the diffusion photovoltage, sometimes referred to as the Dember photovoltage. It must be emphasized that not only the local values of surface recombination velocity but also the reflection coefficient influence the PEM response. Investigation show that the PEM effect is more sensitive to the inhomogeneity of a semiconductor surface than the photovoltaic effect.