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机译:一个简单的半经验短沟道MOSFET电流-电压模型,在所有工作区域均连续,仅使用物理参数
Microsyst. Technol. Lab., Massachusetts Inst. of Technol., Cambridge, MA, USA;
MOSFET; benchmark testing; performance evaluation; semiconductor device models; MOSFET performance scaling; benchmarking; carrier low-field effective mobility; device operation; drain-induced barrier lowering coefficient; effective channel length; gate capacitance; parasitic source-drain resistance; performance projection; physical parameters; saturation region carrier velocity; saturation-transition-region empirical parameter; semiempirical short-channel MOSFET current; state-of-the-art planar short-channel strained devices; strong inversion conditions; subthreshold swing; top-of-the-barrier-transport model; total resistance; virtual source model; voltage model; weak inversion current; CMOS scaling; MOSFET compact modeling; inversion charge density; virtual source velocity;
机译:短沟道双栅MOSFET的连续区域电流电压模型
机译:围绕栅极短沟道纳米线MOSFET的电流-电压特性的简单模型
机译:强反演的新型短沟道n-MOSFET电流-电压模型及统一参数提取方法
机译:隧道脚电流-电压特性的连续半经验模型
机译:用于低压集成电路应用的双栅CMOS设计和分析,包括绝缘体上硅MOSFET的物理建模。
机译:面向低电压低能耗的超薄绝缘体上硅MOSFET低频噪声行为的经验和理论模型
机译:硅锗(SiGe)衬底上带有应变硅(s-Si)沟道的短沟道双材料栅极(DMG)MOSFET阈值电压的分析模型