Development of 2-D Boron Nitride Nanosheets UV Photoconductive Detectors

摘要

We report on our new approach to low-temperature synthesis of high-quality single crystalline wide bandgap boron nitride nanosheets (BNNSs) semiconductor for the development of deep ultraviolet (UV) photoconductive detectors. We focus our experiments on studies of electrical and electronic properties, as well as sensitivity, response and recovery times, and repeatability of newly fabricated deep UV detectors. Raman scattering spectroscopy, X-ray diffraction, scanning electron microscope (SEM), transmission electron microscopy (TEM), and electrometers were used to characterize the BNNS photoconductive materials. The SEM and TEM measurements clearly indicate that each sample consists of a large amount of high-quality BNNSs. High transparency related to high quality of crystalline structures of BNNS has been identified. Based on the synthesized BNNSs, deep UV detector is designed, fabricated, and tested. High sensitivity, quick time responsivity <0.6 ms has been achieved.