Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium–Tin-Oxide Electrode

摘要

This paper proposes low power consumption resistance random access memory (RRAM) devices with indium–tin-oxide (ITO) electrodes. The development of the Internet of Things (IoT) is a trend in future technology, but the bottleneck in IoT development is high power consumption; therefore, targeting low-power-consumption memory is crucial for the IoT. ITO-capped RRAM devices have been shown to exhibit outstanding performance and low power consumption, and here, we propose an oxygen accumulation mechanism by analyzing device characteristics. We find that the conduction current mechanism will be affected by oxygen absorbance in the ITO electrode. During the forming and set processes, oxygen ions will be propelled into the ITO electrode due to its oxygen vacancy-rich property; therefore, we find Schottky emission both at high-resistance state and low-resistance state and that the device exhibits an automatic current compliance property. Varied stop-voltage measurements were carried out to verify the device mechanism. Because of its capability for oxygen storage, the thick ITO layer was confirmed to affect the characteristic due to a difference in oxygen gradient. A new structure and novel material are proposed, based on the devices with ITO electrodes to improve performance and reduce power consumption.