Super Single Pulse Charge Pumping Technique for Profiling Interfacial Defects

摘要

Traditional charge pumping (CP) technique relies on trap-assisted recombination from the source/drain to the body contact to characterize interface trap density ( ${N}_{ext {it}}$ ) of classical bulk MOSFETs. A variant of the technique called single pulse CP (SPCP) allows interface trap characterization even if the bulk contact is absent, as in silicon-on-insulator (SOI) MOSFET. Unfortunately, neither technique is useful for devices with source-body-tied (SBT) and inhomogeneous channel doping profile, as in lateral diffused MOS (LDMOS) power transistors. Here, we propose a generalization of the CP/SPCP techniques, called Super SPCP ( $ext{S}^{{2}}$ PCP), to extract position-resolved localized degradations ( ${Delta {N}}_{ext {it}}$ ) in an SBT LDMOS. Careful TCAD modeling and experimental characterizations demonstrate the effectiveness of the proposed approach. Our analysis provides deep insights into the physics of the SPCP technique, demonstrating that the approach can be used to characterize a variety of transistors with nontraditional doping profiles and contact configurations.