...
首页> 外文期刊>Electrical Engineers, Proceedings of the Institution of >Effect of domain-wall motion on power loss in grain-oriented silicon-iron sheet
【24h】

Effect of domain-wall motion on power loss in grain-oriented silicon-iron sheet

机译:畴壁运动对晶粒取向硅铁片功率损耗的影响

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Loss measurements and domain observations are presented for two types of grain-oriented 3%-silicon-iron sheet having widely differing domain sizes, in order to elucidate the origin of anomalous loss in magnetic materials. An alternative method is presented for separation of eddy current and hysteresis losses, which gives a more realistic representation of the processes of domain magnetisation than the conventional definitions. The large eddy-current and hysteresis losses, under alternating conditions at power frequencies, can be ascribed to the wide variation in domain-wall displacements. At high flux densities most of the anomalous loss is due to the large increase in effective a.c. hysteresis loss. By reducing the spread of wall displacements in commercial grain-oriented silicon iron, the losses at 50 Hz could be reduced by up to 30%, and by up to 50% by a reduction in domain width.
机译:为了阐明磁性材料中异常损耗的起因,对两种类型的晶粒取向3%硅铁片的损耗测量和磁畴观测进行了介绍,磁畴尺寸差异很大。提出了一种用于分离涡流和磁滞损耗的替代方法,该方法比常规定义更真实地表示了磁化过程。在工频交替条件下,大的涡电流和磁滞损耗可归因于畴壁位移的广泛变化。在高通量密度下,大多数异常损耗是由于有效交流电的大幅增加所致。磁滞损耗。通过减少商用晶粒取向硅铁中壁位移的分布,可以降低30 Hz时的损耗,并通过减小畴宽来降低50%的损耗。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号