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Double-diode trapatt pulse generator with applications to avalanche-diode research

机译:双二极管陷波脉冲发生器及其在雪崩二极管研究中的应用

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Improvements in trapatt pulse generators are described. By using two diodes in a push-pull configuration, pulses around 250 ps duration with up to 800 W peak power can be produced with repetition rates around 1 GHz. Measurements of diode breakdown under controlled high-speed voltage pulses from such a generator have been made on X-band trapatt diodes. These measurements show that relaxation-type oscillations can start in resistive circuits and thus support the relaxation oscillation theory for the starting mechanism of trapatt oscillations. They further suggest that high-frequency trapatt devices may have difficulty in operating efficiently at frequencies lower than some particular value determined by the relaxation oscillations.
机译:描述了trapatt脉冲发生器的改进。通过在推挽式配置中使用两个二极管,可以以大约1 GHz的重复频率产生250 ps持续时间的脉冲,峰值功率高达800W。在X波段陷波二极管上,在来自这样的发生器的受控的高速电压脉冲下测量二极管的击穿。这些测量结果表明,弛豫型振荡可以在电阻电路中启动,因此支持了弛豫振荡理论作为自陷振荡的启动机制。他们进一步提出,高频陷波器装置可能难以在低于由张弛振荡确定的某些特定值的频率下有效运行。

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