Researchers Explore Nonvolatile Resistive Ram As Flash Replacement

摘要

As the end of the road draws ever nearer for flash memory, researchers are leaving no stone unturned in their attempts to find an alternative nonvolatile-storage mechanism that can scale to processes smaller than 32 nm-the point at which, many fear, flash may run out of gas. These explorations have encompassed magne-toresistive RAM, phase-change memory, and a number of other mechanisms. Researchers are, however, still investigating new materials, perhaps indicating the lack of definitive progress in any of the other areas.