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A novel analysis of offset mho characteristic of memory-polarized and cross-polarized distance functions

机译:记忆极化和交叉极化距离函数的偏移mho特性的新颖分析

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This article shows a novel and detailed description of the offset mho characteristic of memory-polarized and cross-polarized distance functions. The exact expressions for offset impedances are found, analyzing by symmetrical components a power system taken as an example. The power system model is general, and it includes the effect of additional interconnections between both line ends. Single line-to-ground faults, line-to-line faults, and double-line-to-ground faults are rigorously analyzed. Memory-polarized and cross-polarized distance functions have variable characteristics in the R-X plane (i.e., offset values change, depending on power system conditions), and these variations are shown for the analyzed example. Under some circumstances, the directionality of these distance functions is not evident, and the possible use of an additional directionality restraint is analyzed. (C) 2018 Elsevier B.V. All rights reserved.
机译:本文显示了记忆极化和交叉极化距离函数的偏移mho特性的新颖详细描述。找到偏移阻抗的精确表达式,以对称组件为例分析电力系统。电力系统模型是通用的,它包括线路两端之间附加互连的影响。严格分析了单线对地故障,线对线故障和双线对地故障。记忆极化和交叉极化的距离函数在R-X平面中具有可变的特性(即偏移值根据电源系统条件而变化),这些变化显示在分析的示例中。在某些情况下,这些距离函数的方向性并不明显,因此分析了附加方向性约束的可能使用。 (C)2018 Elsevier B.V.保留所有权利。

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