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机译:氧化钼的表面处理可改善有机发光二极管的性能
School of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, South Korea;
rnSchool of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, South Korea;
rnSchool of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, South Korea;
rnSchool of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, South Korea;
OLED; efficiency; UVO treatment; plasma treatment; interface resistance;
机译:在具有掺杂发光区的掺氟氧化锡(FTO)表面上使用4,4'-N,N'-二咔唑-联苯(CBP)层提高有机发光二极管的性能
机译:氧化铟锡表面处理可改善有机发光二极管的性能
机译:通过低能离子束对铟锡氧化物表面的处理来改善有机发光二极管的性能
机译:空穴传输层内含三氧化钼的有机发光二极管的电致发光性能
机译:具有三氧化钼掺杂的空穴传输层的高效有机发光二极管。
机译:包括吡啶和二苯基氧化膦在内的双n型单元:高性能有机发光二极管主体材料的有效设计策略
机译:氧化铟锡表面修饰对空穴注入和有机发光二极管性能的影响