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首页> 外文期刊>Discrete and continuous dynamical systems▼hSeries S >MEMORIZED RELAXATION WITH SINGULAR AND NON-SINGULAR MEMORY KERNELS FOR BASIC RELAXATION OF DIELECTRIC VIS-A-VIS CURIE-VON SCHWEIDLER & KOHLRAUSCH RELAXATION LAWS
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MEMORIZED RELAXATION WITH SINGULAR AND NON-SINGULAR MEMORY KERNELS FOR BASIC RELAXATION OF DIELECTRIC VIS-A-VIS CURIE-VON SCHWEIDLER & KOHLRAUSCH RELAXATION LAWS

机译:用奇异和非奇异记忆核记忆放松,用于介电VIS-VAN施韦勒&Kohlrausch放松法的基本放松

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We have constructed the basic dielectric relaxation's evolution expression for relaxing current as convolution operation of the chosen memory kernel and rate of change of applied voltage. We have studied types of memory kernels singular, non-singular and combination of singular and non-singular (mixed) decaying functions. With these, we form constitutive equations for relaxation dynamics of dielectrics; i.e. capacitor. We observe that though mathematically we can use non-singular kernels yet this does not give presently much useful practical or physically realizable results and interpretations. We relate our observations to relaxation currents given via Curie-von Schweidler and Kohlraush laws. The Curie-von Schweidler law gives singular function power law as basic relaxation current in dielectric relaxation; whereas the Kohlraush law is Electric field relaxation in dielectric as non-Debye function taken as stretched exponential i.e. non-singular function. These two laws are used since late nineteenth century for various dielectric relaxation and characterization studies. Here we arrive at general constitutive equation for capacitor and with each type of memory kernel we give corresponding impedance function and in some cases equivalent circuit representation for the capacitor element. We classify these systems as Curie-von Shweidler type for system with singular memory kernel function and Kohlraush type for system evolved via using non-singular function or mixed functions as memory kernel. We note that use of singular memory kernel gives constituent relations and impedance functions that are experimentally verified in large number of cases of dielectric studies. Therefore, we have a question, does natural relaxation dynamics for dielectrics have a singular memory kernel, and the relaxation current function is singular in nature? Is it the singular relaxation function for capacitor dynamics with singular memory kernel remains universal law for dielectric relaxation? However, we are not questioning researchers modeling relaxation of dielectric via non-singular functions, yet we are hinting about complexity and lack of interpretability of basic constituent equation of dielectric relaxation dynamics thus obtained via considering non-singular and mixed memory kernels; perhaps due to insufficient experimental evidences presently. However, the method employed in this study is general method. This method can be used to form memorized constituent equations for other systems (say Radioactive Decay/Growth, Diffusion and Wave phenomena) from basic evolution equation, i.e. effect function as convolution of memory kernel with cause function.
机译:我们构建了基本介电松弛的进化表达式,以便放松电流作为所选存储核的卷积操作和施加电压的变化率。我们研究了单数,非奇异和单数和非单数(混合)衰变功能的奇异类型,非奇异和组合的类型。有了这些,我们形成介质的弛豫动态的本构方程;即电容器。我们观察到,虽然数学,我们可以使用非单数内核,但这并没有给出目前有用的实际或物理可实现的结果和解释。我们将我们的观察与Curie-Von Schweidler和Kohlraush Smally提供给放松电流。 Curie-Von Schweidler Law将奇异函数权力律提供介电弛豫的基本松弛电流;鉴于Kohlraush Law是电介质的电场弛豫,因为非德语函数作为拉伸指数I.。自十九世纪末以来,这两种法律用于各种介电松弛和表征研究。在这里,我们对电容器的一般结构方程以及每种类型的存储器内核到达,我们给出了相应的阻抗功能,并且在一些情况下电容器元件的等效电路表示。我们将这些系统分类为具有奇异内存内核功能的CURIE-VON SHWEIDLER类型,使用非单数函数或混合函数作为内存内核的系统演化的系统。我们注意到奇异内存内核的使用使组成关系和阻抗功能在大量的介电研究情况下进行了实验验证。因此,我们有一个问题,对电介质的自然松弛动力学有一个奇异的记忆核,弛豫电流功能本质上是单数吗?是否是具有奇异内存核的电容器动态的奇异放松功能仍然是介电弛豫的普遍定律?然而,我们并不质疑研究人员通过非奇异函数建模介质的弛豫,但我们暗示了通过考虑非单数和混合记忆核而获得的介电弛豫动力学的基本组成方程的复杂性和缺乏可解释性;也许目前的实验证据不足。然而,本研究中使用的方法是一般方法。该方法可用于从基本演义方程中形成其他系统的记忆成分方程(例如,从基本演化方程,即效果函数作为内存内核与原因函数的卷积。

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