Diamond-wire-sawn (DWS) technology has been widely used in the photovoltaic industry. When using the HF/HNO_(3)/H_(2)O acid etching solution for texturing of DWS multi-crystalline silicon(mc-Si), the aid of additive is required to improve the reactivity of the mc-Si surface in the acid texturing solution. It also needs to enhance the nucleation and uniform growth of the texturing surface. This paper proposes a non-metallic additive for DWS mc-Si texturing. Sodium polyacrylate is added to the HF/HNO_(3)/H_(2)O acid etching solution to reduce the reflectance of DWS mc-Si and improve surface morphology. Compared to the textured wafers without additive, the surface of the wafers using this method is uniformly distributed with pits whose size is 0.5 μm×1 μm. And the weighted average reflectance of the textured wafers can be reduced from 33.32% to 23.9% in the wavelength range of 350–1100 nm, with the lowest reflectance of 19.8% reached at 950 nm. It shows a promising application prospect.
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