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首页> 外文期刊>MATEC Web of Conferences >Practical Reuse of Activated Carbon in the Exhaust Facility of Semiconductor Production Factory with Supercritical Carbon Dioxide Regeneration
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Practical Reuse of Activated Carbon in the Exhaust Facility of Semiconductor Production Factory with Supercritical Carbon Dioxide Regeneration

机译:具有超临界二氧化碳再生的半导体生产工厂排气设施中活性炭的实用重用

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An possible reason why the activated carbon used in the exhaust facility of real semiconductor production factory could not be regenerated by scCO_(2)regeneration was estimated to be attributable to its high boiling point adsorbates which showed a peak in TGA (Thermogravimetric analysis) curve at 400-900°C. This study was conducted to experimentally verify the above insight by using TGA analysis and scCO_(2)regeneration for the real samples with different loads from the factory. The experimental results showed that high boiling point ratio defined by TGA analysis was less than 4.0% in case of the heating treatment temperature of 200 °C in the exhasut facility of real semiconductor production factory. This result suggested regeneration rate of the activated carbon was higher than 80%. Our scCO_(2)regeneration process can achieve high efficiency as a practical application.
机译:在真实半导体生产工厂的排气设施中使用的活性炭不能通过SCCO_(2)再生估计可归因于其高沸点吸附物,其在TGA(热重分析)曲线上显示出峰值 400-900°C。 进行了本研究以通过使用来自工厂的不同载荷的真实样品进行TGA分析和SCCO_(2)再生来实验验证上述洞察力。 实验结果表明,在真正的半导体生产工厂的Exhasut设施中加热处理温度为200°C的情况下,TGA分析定义的高沸点比小于4.0%。 该结果表明活性炭的再生率高于80%。 我们的SCCO_(2)再生过程可以实现高效率作为实际应用。

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