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IMC microstructure modification and mechanical reinforcement of Sn–Ag–Cu/Cu microelectronic joints through an advanced surface finish technique

机译:通过先进的表面光洁度技术进行SN-AG-Cu / Cu微电子接头的IMC微结构改性和机械加固

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Intermetallic compound(s) (IMC) that nucleates at the interface between solder and Cu trace during a soldering reaction, is one of the most crucial factors for microelectronic packaging reliability. This study was conducted to modify the IMC microstructure and to reinforce the mechanical strength of Sn–Ag–Cu/Cu microelectronic joints through various surface finish coatings, including organic solderability preservative (OSP), immersion Ag (ImAg), immersion Sn (ImSn), Au/Pd (electroless palladium/immersion gold, EPIG), and Au/Pd/Au (IGEPIG) layer(s). We confirmed that the type of surface finish dominated the IMC growth morphology and mechanical characteristics of the Sn–Ag–Cu/Cu solder joints, even though these surface finishes were eliminated in a few seconds of the soldering process. A dense Cu6Sn5layer with a scallop-like appearance was obtained for the traditional OSP case, while a prismatic, loose Cu6Sn5microstructure was produced for the alternative cases (metal films). This loose Cu6Sn5microstructure offered numerous molten solder channels for the in-diffusion of Sn to Cu, retarding undesired Cu3Sn growth at the Cu6Sn5/Cu interface; consequently, a brittle-to-ductile transition in the joint fracture mode with a high shear strength and fracture energy was obtained in the high-speed ball shear (HSBS) test. A significant mechanical reinforcement of the Sn–Ag–Cu/Cu microelectronic joints can be achieved with the replacement of the traditional OSP coating by the newly developed IGEPIG trilayer surface finish.
机译:金属间化合物(IMC)在焊接反应过程中焊料和Cu迹线之间的界面中成核,是微电子包装可靠性的最重要因素之一。进行该研究以改变IMC微观结构,并通过各种表面光洁度涂层加强Sn-Ag-Cu / Cu微电子接头的机械强度,包括有机可焊性防腐剂(OSP),浸入式Ag(Imm),浸入式Sn(IMSN) ,Au / Pd(化学型钯/浸泡金,EPIG)和Au / Pd / Au(Igepig)层。我们证实,表面光洁度的类型为Sn-Ag-Cu / Cu / Cu焊点的IMC生长形态和机械特性支配了,即使在焊接过程的几秒钟内消除了这些表面光洁度。为传统OSP案例获得了具有扇贝样外观的密集Cu6Sn5晶片,而替代情况(金属薄膜)生产棱柱形,松散的Cu6Sn5microstructure。这种松散的Cu6Sn5microstructure提供了许多用于Sn的熔融焊接通道,用于Sn至Cu的分散,在Cu6Sn5 / Cu接口处延迟不需要的Cu3SN生长;因此,在高速球剪切(HSBS)试验中获得了具有高剪切强度和断裂能的关节断裂模式中的脆性 - 扩展。通过新开发的IGEPIG三层表面光洁度更换传统的OSP涂层,可以实现SN-AG-CU / Cu / Cu微电子关节的显着机械加固。

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