Applied Physics 2019: Charge-diminution at the Si-SiO2 system interface - Kropman D - Tallinn University

摘要

The way that a positive charge development happens in SiO2 film during the cycle of Si warm oxidation is now known, with the arrangement being needy upon the oxidation conditions which include temperature, time and surrounding conditions. This is associated by oxygen opportunities in the SiO2 film and unsaturated Si3, bonds at the interface.