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首页> 外文期刊>Journal of Applied Mathematics and Physics >Electronic Transport Properties of Phenalenyl Molecular Devices via Gated Modulation
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Electronic Transport Properties of Phenalenyl Molecular Devices via Gated Modulation

机译:通过门控调制的苯烯基的电子传输性能

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摘要

By applying nonequilibrium Green’s functions (NEGF) in combination with the density functional theory (DFT), we investigate the electronic transport properties of gated phenalenyl molecular devices with two different contact geometries. The calculated results show that electronic transport properties of the two different devices can be modulated by external transverse gates. When the molecule contacts the Au electrodes through two second-nearest sites, the current-voltage ( I - V ) characteristic curves are symmetric and suppressed by the gate electrodes. However, a rectifying behavior will occur when the electrodes connect the molecule on both sides, one second-nearest site and one third-nearest site, respectively. Mechanisms for such phenomena are proposed and these findings suggest a new opportunity for developing molecular devices.
机译:通过将非Quiribium的功能(NegF)与密度泛函理论(DFT)组合应用,我们研究了具有两个不同接触几何形状的门控酚分子器装置的电子传输性能。计算结果表明,可以通过外部横向栅极调制两个不同器件的电子传输特性。当分子通过两个第二最近的站点接触Au电极时,电流 - 电压(I-V)特性曲线是对称的并且被栅电极抑制。然而,当电极将分子分别在两侧,一个第二最近的网站和第三位网站上分别连接分子时,将发生整流行为。提出了这种现象的机制,这些研究结果表明了开发分子装置的新机会。

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