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Numerical simulation of deformation memory effect of rock materials in low‐stress condition using discrete element method

机译:不同元素法测压低应力条件变形记忆效应的数值模拟

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The slip behavior of the pre‐existing sliding planes (eg, cracks or inter‐grain boundaries) in rocks is a natural candidate for a mechanism of the deformation memory effect. Based on this mechanism, the deformation rate analysis (DRA) method can be used to measure in situ stress in low‐stress region. However, the traditional discrete element method (DEM) is unable to model the deformation memory effect of rock when the loading stress is lower than the crack initiation stress due to the insufficient consideration for sliding planes. The simulated stress‐strain curves obtained from previous DEM are linear in initial loading stage until cracks start to grow. In the present work, the properties of planes (ie, cohesion, frictional resistance, and relocking mechanism) are introduced into DEM contact model to simulate the deformation memory effect of rock in low‐stress region, and its feasibility was confirmed by comparing it with experimental results. It is found that there exists a suitable in situ stress range for DRA method when using it in low‐stress region, among which the inflection is precise. Four factors related to the sliding planes are discussed with parametric study to study their influence on the deformation memory effect. The results show that the cohesion and dip angle are highly related to the threshold value, while the friction coefficient and fraction of slide planes have little influence on the deformation memory effect in rocks.
机译:在岩石中的预先存在的滑动平面(例如,裂缝或晶粒界限)的滑移行为是变形记忆效应机制的自然候选者。基于该机制,可以使用变形速率分析(DRA)方法在低应力区域中测量原位应力。然而,传统的离散元件方法(DEM)不能在负载应力低于裂纹启动应力时模拟岩石的变形记忆效应,这是由于对滑动平面的不充分考虑而导致的裂纹启动应力。从先前的DEM获得的模拟应力 - 应变曲线在初始加载阶段是线性的,直到裂缝开始生长。在本作工作中,将平面的性质(即,内聚力,摩擦阻力和重新锁定机构)引入DEM接触模型,以模拟低应力区域中岩石的变形记忆效果,并通过将其与其进行比较确认其可行性实验结果。发现当在低应力区域中使用时,可以存在适用于DRA方法的原位应力范围,其中拐点精确。与滑动平面有关的四个因素与参数研究讨论,以研究它们对变形记忆效果的影响。结果表明,凝聚力和倾角与阈值高度相关,而滑坡的摩擦系数和分数对岩石中的变形记忆效果几乎没有影响。

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