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On Some Ve-Degree and Harmonic Molecular Topological Properties of Carborundum

机译:论碳布焊人的一些维度和谐波分子拓扑特性

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Carborundum, also known as silicon carbide which containing carbon and silicon, is a semiconductor. Molecular topological properties of physical substances are important tools to investigate the underlying topology of these substances. Ev-degree and ve-degree based on the molecular topological indices have been defined as parallel to their corresponding classical degree based topological indices in chemical graph theory. Classical degree based topological properties of carborundum have been investigated recently. As a continuation of these studies, in this study, we compute novel ve-degree harmonic, ve-degree sum-connectivity, ve-degree geometric-arithmetic, and ve-degree atom-bond connectivity, the first and the fifth harmonic molecular topological indices of two carborundum structures.
机译:Carborundum,也称为含有碳和硅的碳化硅,是半导体。物理物质的分子拓扑特性是研究这些物质的基础拓扑的重要工具。基于分子拓扑指标的EV度和Ve度被定义为与其相应的化学图理论中的基于经典程度的拓扑指标平行。最近调查了Carborundum的经典学位拓扑特性。作为这些研究的延续,在本研究中,我们计算了新的VE程度谐波,VE度和 - 连接,VE度几何算术和VE度原子键连接,第一和第五次谐波分子拓扑两个Carborundum结构的指数。

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