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Band alignment of β-(AlxGa1?x)2O3 alloys via atomic solid-state energy scale approach

机译:β-(ALXGA1≤X)2O3合金的带对准通过原子固态能量级别方法

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摘要

We presented a simple estimation method for band alignment of semiconductor alloys based on the atomic solid-state energy (SSE) scale. Our method has the advantage that natural band alignment can be determined using the SSE and energy gap of materials. We investigated several examples of the valence band offset and conduction band offset for β - ( A l x G a 1 ? x ) 2 O 3 related heterostructures, and our results were in good agreement with previous experimental data. These results indicated that simple and practical prediction of the band offset and alignment of ionic bonded semiconductors can be attained.
机译:我们介绍了一种基于原子固态能量(SSE)刻度的半导体合金的带对准的简单估计方法。我们的方法具有以下优点:可以使用材料的SSE和能量隙来确定自然带对​​准。我们研究了β - (a l x g a 1 x x)2 o 3相关异质结构的价带偏移和导电带偏移的几个例子,我们的结果与先前的实验数据很好。这些结果表明,可以获得可以获得与离子键合半导体的带偏移和对准的简单和实际预测。

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