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Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure

机译:基于铪二硫键/五苯杂交结构的双负差分电阻装置

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Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D‐NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D‐NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable‐gain amplifier configured with the D‐NDR device and an n‐channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D‐NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon.
机译:最近,2D范德沃尔斯(2D VDW)材料和有机材料的组合引起了注意力,因为它们有助于形成各种杂交功能,由于它们的表面上没有悬空粘合而具有优异的界面质量。在这项工作中,报道了由二硫化铪/五苯杂交结和3D五烯电阻组成的混合器2D VDW /有机隧穿装置的双负差分电阻(D-NDR)特征。该D-NDR现象是通过用五烯电阻的NDR峰值电压精确地控制NDR峰值电压来实现,然后并联整合两个不同的NDR器件。然后,使用Cadence Specter仿真平台演示配置有D-NDR设备和N沟道晶体管的可控增益放大器的操作。基于杂交2D VDW /有机异质结构的所提出的D-NDR器件技术为需要NDR现象的各种电路应用提供了一种科学基础。

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