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Experimental Observation of Temperature-Driven Topological Phase Transition in HgTe/CdHgTe Quantum Wells

机译:HGTE / CDHGTE量子阱温度驱动拓扑相变的实验观察

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We report on the comparison between temperature-dependent magneto-absorption and magnetotransport spectroscopy of HgTe/CdHgTe quantum wells in terms of the detection of the phase transition between the topological insulator and band insulator states. Our results demonstrate that temperature-dependent magnetospectroscopy is a powerful tool to discriminate trivial and topological insulator phases, yet the magnetotransport method is shown to have advantages for the clear manifestation of the phase transition with accurate quantitative values of the transition parameter (i.e., critical magnetic field Bc).
机译:我们报告了HGTE / CDHGTE量子阱的温度依赖磁吸收和磁传输光谱的比较,就拓扑绝缘体和带绝缘子状态之间的相位过渡的检测。我们的结果表明,温度依赖的磁旋磁分光图是一种辨别琐碎和拓扑绝缘体阶段的强大工具,但是磁传输方法显示出具有阶段过渡的清晰表现的优点(即,临界磁性的精确定量值字段BC)。

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