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首页> 外文期刊>Scientific reports. >Spatial distribution of electrons near the Fermi level in the metallic LaB6 through accurate X-ray charge density study
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Spatial distribution of electrons near the Fermi level in the metallic LaB6 through accurate X-ray charge density study

机译:通过精确的X射线充电密度研究,金属Lab6在金属Lab6附近的电子空间分布

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Charge densities of iso-structural metal hexaborides, a transparent metal LaB6 and a semiconductor BaB6, have been determined using the d?0.22?? ultra-high resolution synchrotron radiation X-ray diffraction data by a multipole refinement and a maximum entropy method (MEM). The quality of the experimental charge densities was evaluated by comparison with theoretical charge densities. The strong inter-octahedral and relatively weak intra-octahedral boron-boron bonds were observed in the charge densities. A difference of valence charge densities between LaB6 and BaB6 was calculated to reveal a small difference between isostructural metal and semiconductor. The weak electron lobes distributed around the inter B6 octahedral bond were observed in the difference density. We found the electron lobes are the conductive π-electrons in LaB6 from the comparison with the theoretical valence charge density. We successfully observed a spatial distribution of electrons near the Fermi level from the X-ray charge density study of the series of iso-structural solids.
机译:使用D 2 0.22(透明金属Lab6和半导体Bab6)透明金属Lab6和半导体Bab6的电荷密度已经确定超高分辨率同步辐射X射线衍射数据通过多极限细化和最大熵方法(MEM)。通过与理论电荷密度进行比较评价实验电荷密度的质量。在电荷密度下观察到强烈的八面体和八面体硼硼 - 硼键观察。计算了Lab6和Bab6之间的价电密度的差异,以揭示体系金属和半导体之间的小差异。在差异密度中观察到围绕B6间八面体键分布的弱电子裂片。我们发现电子裂片是Lab6中的导电π电子,从与理论价电荷密度的比较。我们成功地观察到FERMI水平附近电子的空间分布从X射线电荷密度研究的ISO结构固体的研究。

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