首页> 外文期刊>RSC Advances >Synthesis of amorphous manganese oxide nanoparticles – to – crystalline nanorods through a simple wet-chemical technique using K+ ions as a ‘growth director’ and their morphology-controlled high performance supercapacitor applications
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Synthesis of amorphous manganese oxide nanoparticles – to – crystalline nanorods through a simple wet-chemical technique using K+ ions as a ‘growth director’ and their morphology-controlled high performance supercapacitor applications

机译:用K +离子作为“生长导演”的简单湿化学技术合成无定形锰氧化物纳米粒子 - 晶体纳米芯片及其形态控制的高性能超级电容器应用

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Highly crystalline manganese-oxide nanostructures are fabricated by acidic reduction of KMnO _(4) solution followed by air-annealing. During annealing, the nanostructures are converted from nanoparticles (diameters ~ 100 nm) to nanorods (width ~ 20 nm), which depends on the K ~(+) ion content within the samples. K ~(+) ions are considered to act as a ‘growth-director’ for the nanoparticle-to-nanorod conversion process. By controlling the K ~(+) content through a simple rinsing step, the nanostructures are effectively controlled to be either only nanorod structures, or of pure nanoparticle structure or a mixture of both. Electrochemical characterization of these three types of nanostructures revealed that nanorod–nanoparticle mixture samples have superior electrochemical performance compared to others, which is attributed to their unique morphology, with a combination of highly crystalline 1D-nanorods and the porous structure of 3D-nanoparticles. This provides a high active surface area in the pores of nanoparticles and high surface-to-volume ratio in the nanorods for considerably higher utilization of the active materials during electrochemical performance.
机译:通过KMNO _(4)溶液的酸性还原,然后进行空气退火,制造高度结晶的锰氧化物纳米结构。在退火期间,纳米结构由纳米颗粒(直径约100nm)转化为纳米棒(宽度〜20nm),这取决于样品内的K〜(+)离子含量。 K〜(+)离子被认为是纳米颗粒到纳米棒转化过程的“生长导向器”。通过通过简单的漂洗步骤控制K〜(+)含量,纳米结构被有效地控制为仅是纳米棒结构,或纯纳米颗粒结构或两者的混合物。这三种纳米结构的电化学表征显示,与其他类型的纳米棒 - 纳米颗粒混合物样品具有优异的电化学性能,其归因于它们独特的形态学,其具有高度结晶的1D纳米棒和3D纳米颗粒的多孔结构。这在纳米颗粒的孔中提供了高活性表面积和纳米棒中的高表面积比,以便在电化学性能期间显着利用活性材料。

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