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Effect of van der Waals interactions on the adhesion strength at the interface of the hydroxyapatite–titanium biocomposite: a first-principles study

机译:范德华相互作用对羟基磷灰石 - 钛生物复合材料界面粘合强度的影响:一项研究

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Hydroxyapatite (HAP) is frequently used as biocompatible coating on Ti-based implants. In this context, the HAP-Ti adhesion is of crucial importance. Here, we report ab initio calculations to investigate the influence of Si incorporation into the amorphous calcium-phosphate (a-HAP) structure on the interfacial bonding mechanism between the a-HAP coating and an amorphous titanium dioxide (a-TiO _(2) ) substrate, contrasting two different density functionals: PBE-GGA, and DFT-D3, which are capable of describing the influence of the van der Waals (vdW) interactions. In particular, we discuss the effect of dispersion on the work of adhesion ( W _(ad) ), equilibrium geometries, and charge density difference (CDD). We find that replacement of P by Si in a-HAP (a-Si-HAP) with the creation of OH vacancies as charge compensation results in a significant increase in the bond strength between the coating and substrate in the case of using the PBE-GGA functional. However, including the vdW interactions shows that these forces considerably contribute to the W _(ad) . We show that the difference ( W _(ad) ? W _(ad) (vdW)) is on average more than 1.1 J m ~(?2) and 0.5 J m ~(?2) for a-HAP/a-TiO _(2) and a-Si-HAP/a-TiO _(2) , respectively. These results reveal that including vdW interactions is essential for accurately describing the chemical bonding at the a-HAP/a-TiO _(2) interface.
机译:羟基磷灰石(HAP)经常用作Ti基植入物上的生物相容性涂层。在这种情况下,HAP-Ti粘附性至关重要。在这里,我们报告AB Initio计算,以研究Si掺入到A-Hap涂层和无定形钛二氧化物(A-TiO _(2)之间的界面键合机制上的非晶钙 - 磷酸盐(A-HAP)结构的影响)基板,对比两种不同的密度官能:PBE-GGA和DFT-D3,其能够描述VAN DAR WAALS(VDW)相互作用的影响。特别地,我们讨论了分散对粘附性工作(W _(Ad)),平衡几何和电荷密度差(CDD)的影响。我们发现在A-HAP(A-Si-HAP)中替换P替换PATS的oh空缺,因为电荷补偿导致涂层和基板之间的粘合强度的显着增加,在使用pbe - GGA功能。然而,包括VDW交互表明这些力有很大贡献了W _(AD)。我们表明A-HAP / A的平均差异(W _(AD)?W _(AD)(VDW)(VDW))和0.5J M〜(?2)。 TiO_(2)和A-Si-Hap / A-TiO _(2)分别。这些结果表明,包括VDW相互作用对于准确地描述A-HAP / A-TiO _(2)界面处的化学键合至关重要。

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