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Adsorption and sensing of CO and NH3 on chemically modified graphene surfaces

机译:化学改性石墨烯表面CO和NH3的吸附和感测

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We have studied the electronic structure and adsorption characteristics of environmentally potent gaseous molecules like carbon monoxide (CO) and ammonia (NH _(3) ) on chemically modified surfaces of graphene, employing ab initio density functional methods. An insight into the changes made in the electronic band structure due to intrinsic and extrinsic doping and through a combined effect of both is discussed. With this regard, the adsorption of these gaseous moieties is investigated on substitutionally p- and n- doped graphene surfaces, doped with various mole fractions and having different configurational patterns on the surface. Even though the electronic properties are modified with various mole fractions of doping they do not show a methodical increase with the increase in the dopant concentration. This is attributed to the sub-lattice induced symmetry breaking for the dopant configurations where equivalent lattice sites are occupied on the surface. An appreciable band gap opening of around 0.63 eV is observed on doping, due to sub-lattice symmetry breaking. This is further improved on molecular doping, with CO and NH _(3) , where an increase up to 0.83 eV is noted with adsorption of ammonia. While both the molecules are physisorbed on nitrogen doped surfaces, carbon monoxide is strongly physisorbed and ammonia molecules are chemisorbed on a few boron doped surfaces resulting in notable changes in the adsorption energy. Therefore, it is clear that changes in the transport properties can be brought about by adsorption of these molecules on such surfaces and this study clearly indicates the invaluable prospects of such doped surfaces as potential sensors for these molecules.
机译:我们研究了在石墨烯的化学改性表面上的一氧化碳(CO)和氨(NH _(3))等含碳气体分子的电子结构和吸附特性,采用AB初始密度官能化方法。讨论了由于内在和外在掺杂和两者的组合效果导致的电子频带结构所做的改变。鉴于这方面,在取代的p-和n掺杂的石墨烯表面上研究了这些气态部分的吸附,掺杂有各种摩尔分数并在表面上具有不同的配置模式。尽管用各种摩尔掺杂的摩尔分数进行了修饰的电子性质,但由于掺杂剂浓度的增加,它们不显示有条不紊地增加。这归因于亚晶格诱导对称性用于掺杂剂配置的对称性,其中等效晶格位点被占据在表面上。由于诸如晶格对称性断裂,在掺杂上观察到明显的带隙开口约为0.63eV。通过CO和NH _(3),通过CO和NH _(3)进一步改善了这一点,其中氨的吸附,注意到高达0.83eV。虽然两种分子在氮掺杂表面上被物质吸收,但是一氧化碳强烈地吸收,并且氨分子在几个掺杂的表面上化学吸收,导致吸附能量的显着变化。因此,很明显,通过在这种表面上吸附这些分子,可以通过对这些分子的潜在传感器的潜在传感器的可宝贵前景来引起传输性质的变化。

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